Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics

This work presents a novel process to manufacture advanced Germanium-On-Insulator with integrated Silicon Nitride (GOIN) stripes as light waveguide for Ge photonic devices. Through the integration of GOIN stripes, larger tensile strain could be imposed bonded layer which may used tailor bandgap material short wave length infrared application. The successful fabrication substrate makes opportunity monolithic high-performance Ge-based high mobility transistors components where silicon nitride is low optical loss.